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1999, Applied Physics Letters
The exchange bias shift of the hysteresis loop, H E , in antiferromagnetic/ferromagnetic layer systems can be easily controlled ͑within certain limits͒ by cooling in zero field from different magnetization states above the antiferromagnetic Ne ´el temperature, T N . This indicates that for moderate cooling fields, H E is determined by the magnetization state of the ferromagnet at T N , and not by the strength of the cooling field.
Physical Review Letters, 2000
Polarized neutron reflectometry is used to probe the in-plane projection of the net-magnetization vector M of polycrystalline Fe films exchange coupled to twinned (110) MnF 2 or FeF 2 antiferromagnetic (AF) layers. The magnetization reversal mechanism depends upon the orientation of the cooling field with respect to the twinned microstructure of the AF, and whether the applied field is increased to (or decreased from) a positive saturating field; i.e., the magnetization reversal is asymmetric. The reversal of the sample magnetization from one saturated state to the other occurs via either domain wall motion or magnetization rotation on opposite sides of the same hysteresis loop.
Low Temperature Physics, 2012
The influence of magnetic anisotropy of ferromagnetic film on the phenomenon of exchange bias is studied. Hysteresis behavior in the 2-spin model of a ferro/antiferromagnet (FM/AFM) bilayer with exchange bias has been investigated in detail. In this model a half-space of AFM with fixed magnetic configuration contacts with a 2-layer FM film. Twelve different types of magnetization curves M(H) (both with and without hysteresis) have been found. Some of the M(H) curves demonstrate unusual features, such as plateaus and inclined segments. The hysteresis loop becomes asymmetric if the surface anisotropy is taken into account. 0 2 2 0 J J J J H .
2009
We report a theoretical investigation of thermal hysteresis of fourfold anisotropy ferromagnetic ͑FM͒ film exchange coupled to a compensated antiferromagnetic substrate. Thermal hysteresis occurs if the temperature interval includes the reorientation transition temperature, below which the frustration of the interface exchange coupling leads to a 90°rotation of the magnetization of the ferromagnetic layer. The temperature width of the thermal hysteresis is tunable by external magnetic fields of modest magnitude, with values of 43 K for an external field of 110 Oe and of 14 K for a field of 210 Oe, for a Fe͑12 nm͒ / MnF 2 ͑110͒ bilayer. For a Fe͑3 nm͒ / FeF 2 ͑110͒ bilayer the width of the thermal hysteresis is 23 K at 110 Oe and 13 K at 300 Oe. We discuss how the thickness of the iron film affects the field tuning of the thermal hysteresis width, and also how the thermal loops may be used to identify the nature of the interface exchange energy.
Low Temperature Physics, 2009
Magnetization field-dependences and the "exchange bias" in ferro/antiferromagnetic systems. I. Model of a bilayer ferromagnetic Low Temperature Physics 35, 476 (2009);
Low Temperature Physics, 2009
Field dependences of the magnetization and exchange bias in ferro/antiferromagnetic systems. II. Continuum model of a ferromagnetic layer
2008
In the admixed Nd 0.75 Ho 0.25 Al 2 system, magnetic moments of Nd and Ho occupying the same crystallographic site are antiferromagnetically coupled and the chosen stoichiometry displays a magnetic compensation behavior (T comp ≈ 24 K) in all orientations. In the vicinity of T comp , the conduction electron polarization (CEP) assumes the role of a soft ferromagnet exchange coupled to a pseudo-antiferromagnet comprising Nd/Ho moments, resulting in an asymmetry in the hysteretic (M-H) loop, i.e., the notion of an exchange bias field (H exch). Across T comp , the CEP contribution reverses sign, and in consonance, the asymmetry in the M-H loop also undergoes a phase reversal. Interestingly, the width of the M-H loop shows a divergence, followed by a collapse on approaching T comp from either end. The observed behavior confirms a long standing prediction based on a phenomenological model for ferrimagnetic systems. The field induced changes across T comp leave an imprint of a quasi-phase transition in the heat capacity data. Magneto-resistance (∆R / R vs T) has an oscillatory response, in which the changes across T c and T comp can be recognized.
Journal of Applied Physics, 2004
Journal of Applied Physics, 1997
The antiferromagnet/ferromagnet exchange coupling giving rise to a shifted hysteresis loop has usually been considered an interfacial effect. We show evidence that this exchange coupling between an antiferromagnet ͑CoO͒ and a ferromagnet ͑Ni 81 Fe 19 ) is long range in nature. Exchange coupling has been observed in tri-layer films consisting of a nonmagnetic noble metal ͑Ag, Au, and Cu͒ spacer layer sandwiched between 300 Å CoO and 300 Å NiFe. The strength of the coupling decreases with increasing spacer layer thickness and vanishes at about 55 Å. This suggests that the antiferromagnetic/ferromagnetic exchange coupling is beyond an interfacial effect, and that conduction electrons may be involved in the mediation of the coupling.
A theory of the hysteresis loop in ferromagnets controlled by the domain wall motion is presented. Domain walls are considered as plane or linear interfaces moving in a random medium under the action of the external ac magnetic field H = H0 sin ωt. We introduce important characteristics of the hysteresis loop, such as dynamic threshold fields, reversal field etc. together with well known characteristics as coercive field and hysteresis loop area (HLA) A. We show that all these characteristics are regulated by two dimensionless combinations of the H0 and ω and intrinsic characteristics of the ferromagnet. The moving domain wall can create magnetic bubbles playing the role of pre-existing nuclei of the reversed magnetization. We discuss a simple model of this process. For magnetization reversal determined by domain inflation we predict that HLA scales as A ∝ ω β H α 0 with α = 1/2 and β = 1/2. Numerical simulations confirm this result.
2007
The exchange bias effect, discovered more than fifty years ago, is a fundamental interfacial property, which occurs between ferromagnetic and antiferromagnetic materials. After intensive experimental and theoretical research over the last ten years, a much clearer picture has emerged about this effect, which is of immense technical importance for magneto-electronic device applications. In this review we start with the discussion of numerical and analytical results of those models which are based on the assumption of coherent rotation of the magnetization. The behavior of the ferromagnetic and antiferromagnetic spins during the magnetization reversal, as well as the dependence of the critical fields on characteristic parameters such as exchange stiffness, magnetic anisotropy, interface disorder etc. are analyzed in detail and the most important models for exchange bias are reviewed. Finally recent experiments in the light of the presented models are discussed.
Physical Review B, 1999
We consider three mechanisms of hysteresis phenomena in alternating magnetic field: the domain wall motion in a random medium, the nucleation and the retardation of magnetization due to slow (critical) fluctuations. We construct quantitative theory for all these processes. The hysteresis is characterized by two dynamic threshold fields, by coercive field and by the so-called reversal field. Their ratios to the static threshold field is shown to be function of two dimensionless variables constituted from the frequency and amplitude of the ac field as well as from some characteristics of the magnet. The area and the shape of the hysteresis loop are found. We consider different limiting cases in which power dependencies are valid. Numerical simulations show the domain wall formation and propagation and confirm the main theoretical predictions. Theory is compared with available experimental data. 75.70.Ak,75.60.Ej, 75.60.Ch
Physical Review B, 2004
The strength of exchange bias and rotatable anisotropy in polycrystalline NiFe− IrMn ferromagnet/ antiferromagnet systems is quantified from dc down to the picosecond time scale by regular quasistatic and microwave magnetometry, as well as magnetic domain observation. A transition from superparamagnetic to antiferromagnetic behavior with increasing IrMn thickness is derived from the magnetic resonance frequency and the effective magnetic damping parameter. A discrepancy between magnetic loop shift and dynamically obtained exchange bias strength is explained by asymmetric rotatable anisotropy contributions with different relaxation times in the antiferromagnetic layer. The time-dependent relaxation is directly confirmed by magnetic domain observations. Partially switching in the IrMn layer even with strong exchange bias is concluded. The increase of coercivity rises solely from the rotatable anisotropy contribution.
Low Temperature Physics, 2018
This study offers an explanation for the occurrence of magnetization exchange bias in antiferromagnets with ferromagnetic inclusions during pre-cooling the system in a magnetic field. The ferromagnetic (FM) subsystem ordered in this field at the Néel temperature leads to an inhomogeneous state of the antiferromagnetic (AFM) matrix with the finite mean effective field at the FM/AFM interface. This field causes exchange bias in the dependence M = M(H) during further remagnetization of the heterogeneous system. To describe the proposed scenario for such an effect, a simple model of a two-dimensional system with round inclusions of the FM phase was considered. Using numerical calculations and previously obtained analytical results, the study determines magnetization dependencies on the external field, which qualitatively explains the features of exchange bias in experimentally studied heterogeneous systems.
APS, 1998
A theory of the hysteresis loop in ferromagnets controlled by the domain wall motion is presented. Domain walls are considered as plane or linear interfaces moving in a random medium under the action of the external ac magnetic field H = H 0 sin ωt. We introduce important characteristics of the hysteresis loop, such as dynamic threshold fields, reversal field etc. together with well known
Physical Review B, 2005
The hysteresis loop shift H E of sub-100-nm ferromagnetic-͑FM-͒ antiferromagnetic ͑AFM͒ nanostructures is found to be strongly influenced by thermal activation effects. These effects, which tend to reduce H E , are more pronounced in the nanostructures than in continuous films with the same composition, particularly for thin AFM layers. In addition, the reduced dimensions of the nanostructures also impose spatial constraints to the AFM domain size, particularly for thick AFM layers. This favors an enhancement of H E . Due to the interplay between these two competing effects, the loop shift in the dots can be either larger or smaller than in the continuous films with the same composition, depending on both the AFM thickness and temperature. A temperature-AFM thickness phase diagram, separating the conditions resulting in larger or smaller H E in the nanostructures with respect to continuous film is derived.
Dynamic magnetization reversal measurements at room temperature have been performed by magneto-optical effect on Au/Co/Au sandwiches with perpendicular anisotropy. Domain wall displacement and domain nucleation regimes govern the magnetization reversal at low and high-applied field sweep rates, respectively. The transition between the two regimes occurs at 200 Oe/s.
Physical Review B, 2016
The exchange bias effect is usually defined as horizontal shift of the field-cooled magnetization loop when an antiferromagnet is directly coupled to a ferromagnet. Uncompensated spins at the interface between the two layers are believed to cause this phenomenon. The presence of such, on the other hand, would infer a vertical, i.e., a magnetization-like shift stemming from the antiferromagnet. Observations of this effect are sparse, especially in the absence of a ferromagnet. We present a model system based on extremely Co doped ZnO in which the uncompensated spins of antiferromagnetic CoO Co . .. configurations lead to this vertical shift and therefore to a field-resistant magnetization. A simple Stoner-Wohlfarth-like model based on configurations of different sizes is used to explain the occurrence of this exchange-bias-like shift and a narrow opening of the magnetization curves.
Journal of Applied Physics, 1983
We have obtained theoretical expressions for the ferromagnetic magnetization curve and hysteresis loop using an extension of the general ideas of the Globus model for polycrystalline ferrimagnets. In this work we take into account the force which resul ts from the variation of the total energy (magnetic energy plus surface energy) in order to find the value of the critical field . Our theoretical magnetization curve agrees well with the experimental curve and our hysteresis loop has the general qualitative features of the corresponding experimental loops.
Journal of Magnetism and Magnetic Materials, 2007
We propose a method for determination of the distribution function P(j) of the coupling energy density j in polycrystalline textured ferromagnetic (F)/antiferromagnetic (AF) film systems. P(j) governs the entire film coupling J and the exchange bias field H e and was not measurable until now. The method is verified by torquemetry in a high magnetic field and by reversing its rotation sense. The transition to a new magnetic steady state after rotation reversal is analyzed within a Stoner-Wohlfarth model including thermal relaxation. This transition is completed earlier for strongly coupled grains than for grains with smaller j, which is reflected in the torque curves. We determined P(j) for a sputtered NiFe(16 nm)/IrMn(0.8 nm) film at T ¼ 50 K in the hysteretic range of coupling energies and found that P strongly decreases for increasing j.
Applied Physics Letters, 2003
In (Pt/Co) n /FeMn multilayers, the magnitude of exchange bias, H E , can be considerably enhanced by placing an ultrathin nonmagnetic Pt spacer between the multilayer ͑ML͒ and the antiferromagnetic ͑AFM͒ layer. The bias is maximum for a spacer layer thickness, t, of a few angstroms and it decreases progressively as t is further increased. This bias enhancement is accompanied by an increase of coercivity, H C . This behavior is due to the role of the Pt spacer in enhancing the perpendicular effective anisotropy of the last Co layer in the ML, which has the effect of increasing the net ferromagnetic ͑FM͒/AFM spin projection, thus leading to the H E and H C enhancements. The decrease of H E and H C for thicker spacer layers is due to the limited range of the FM-AFM proximity effect.