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2003, Physical Review B
Physical Review B, 2004
The strength of exchange bias and rotatable anisotropy in polycrystalline NiFe− IrMn ferromagnet/ antiferromagnet systems is quantified from dc down to the picosecond time scale by regular quasistatic and microwave magnetometry, as well as magnetic domain observation. A transition from superparamagnetic to antiferromagnetic behavior with increasing IrMn thickness is derived from the magnetic resonance frequency and the effective magnetic damping parameter. A discrepancy between magnetic loop shift and dynamically obtained exchange bias strength is explained by asymmetric rotatable anisotropy contributions with different relaxation times in the antiferromagnetic layer. The time-dependent relaxation is directly confirmed by magnetic domain observations. Partially switching in the IrMn layer even with strong exchange bias is concluded. The increase of coercivity rises solely from the rotatable anisotropy contribution.
Physical Review B, 2002
We have undertaken a systematic study of the influence of in-plane crystalline quality of the antiferromagnet on exchange bias. Polarized neutron reflectometry and magnetometry were used to determine the anisotropies of polycrystalline ferromagnetic ͑F͒ Fe thin films exchange coupled to antiferromagnetic ͑AF͒ untwinned single crystal ͑110͒ FeF 2 , twinned single crystal ͑110͒ FeF 2 thin films and ͑110͒ textured polycrystalline FeF 2 thin films. A correlation between the anisotropies of the AF and F thin films with exchange bias was identified. Specifically, when exchange coupling across the F-AF interface introduces an additional anisotropy axis in the F thin film-one perpendicular to the cooling field, the magnetization reversal mechanism is affected ͑as observed with neutron scattering͒ and exchange bias is significantly enhanced.
Journal of physics. Condensed matter : an Institute of Physics journal, 2016
The influence of interface exchange coupling on magnetic anisotropy in the antiferromagnetic oxide/Ni system is investigated. We show how interfacial exchange coupling can be employed not only to pin the magnetization of the ferromagnetic layer but also to support magnetic anisotropy to orient the easy magnetization axis perpendicular to the film plane. The fact that this effect is only observed below the Néel temperature of all investigated antiferromagnetic oxides with significantly different magnetocrystalline anisotropies gives evidence that antiferromagnetic ordering is a source of the additional contribution to the perpendicular effective magnetic anisotropy.
Physical Review B - Condensed Matter and Materials Physics, 2006
Exchange anisotropy in ferromagnet/antiferromagnet (FM/AF) films is usually introduced along the cooling field or FM magnetization direction. Here we investigate the dependence of the exchange anisotropy, loop bifurcation, and reversal mechanism on the cooling field direction using vector magnetometry. Three types of samples (FM=Fe, Ni/AF=FeF2, MnF2) have been studied where the AF layer is epitaxial (110), twinned (110), and polycrystalline. With an epitaxial AF which has one spin axis, the cooling field orients the exchange field along the spin axis. Applying the cooling field perpendicular to the spin axis results in bifurcated loops, whose shape evolves with the cooling field geometry and strength. With a twinned AF where there are two orthogonal spin axes, the exchange field direction is along the bisector of the spin axes that encompass the cooling field. With a polycrystalline AF, the exchange field direction is the same as the cooling field. Transverse hysteresis loops show that when the exchange field has a component perpendicular to the applied field, the magnetization reversal occurs by rotation in the direction of the perpendicular component. Our results demonstrate that in fluoride films, the exchange field is established primarily by the AF anisotropy direction, and only to a lesser extent the cooling field or the magnetization direction. The bifurcated loops are due to a distribution of AF anisotropies and large AF domain sizes. Furthermore, the magnetization reversal process is extremely sensitive to the exchange field direction.
Physical Review Letters, 2003
The exchange bias and magnetic anisotropies in a Co layer on a single-crystalline FeF 2 film have been determined between 30 and 300 K. By postulating that the coupling between the ferromagnet and the antiferromagnet persists above the Néel temperature (T N ) we develop a model that quantitatively describes the exchange bias and the anisotropies over the whole temperature range, both above and below T N . Using only the measured low temperature exchange bias and a distribution of blocking temperatures we explain (i) the temperature dependence of the bias, (ii) the magnitude of the anisotropies, (iii) the opposite sign of the first and second order anisotropies, (iv) the observed 1=T and 1=T 3 temperature dependencies of the first and second order uniaxial anisotropies above T N , and (v) the decrease of the anisotropies below T N .
Physical Review B, 2002
The angular dependence of the magnetic anisotropy of exchange biased Fe/MnF 2 bilayers was measured. Below the Néel temperature of the antiferromagnetic MnF 2 layer, an exchange anisotropy is observed which consists of unidirectional, uniaxial, threefold and fourfold symmetry components. The threefold exchange anisotropy term is responsible for the asymmetric magnetization reversal process recently observed in this system.
Physical Review B, 2009
Exchange bias, referred to the interaction between a ferromagnet ͑FM͒ and an antiferromagnet ͑AFM͒, is a fundamental interfacial magnetic phenomenon, which is key to current and future applications. The effect was discovered half a century ago, and it is well established that the spin structures at the FM/AFM interface play an essential role. However, currently, ad hoc phenomenological anisotropies are often postulated without microscopic justification or sufficient experimental evidence to address magnetization-reversal behavior in exchange-bias systems. We advance toward a detailed microscopic understanding of the magnetic anisotropies in exchange-bias FM/AFM systems by showing that symmetry-breaking anisotropies leave a distinct fingerprint in the asymmetry of the magnetization reversal and we demonstrate how these emerging anisotropies are correlated with the intrinsic anisotropy. Angular and vectorial resolved Kerr hysteresis loops from FM/AFM bilayers with varying degree of ferromagnetic anisotropy reveal a noncollinear anisotropy, which becomes important for ferromagnets with vanishing intrinsic anisotropy. Numerical simulations show that this anisotropy naturally arises from the inevitable spin frustration at an atomically rough FM/AFM interface. As a consequence, we show in detail how the differences observed for different materials during magnetization reversal can be understood in general terms as originating from the interplay between interfacial frustration and intrinsic anisotropies. This understanding will certainly open additional avenues to tailor future advanced magnetic materials.
Physical Review Letters, 2005
The magnetization reversal in exchange-biased ferromagnetic-antiferromagnetic (FM-AFM) bilayers is investigated. Different reversal pathways on each branch of the hysteresis loop, i.e., asymmetry, are obtained both experimentally and theoretically when the magnetic field is applied at certain angles from the anisotropy direction. The range of angles and the magnitude of this asymmetry are determined by the ratio between the FM anisotropy and the interfacial FM-AFM exchange anisotropy. The occurrence of asymmetry is linked with the appearance of irreversibility, i.e., finite coercivity, as well as with the maximum of exchange bias, increasing for larger anisotropy ratios. Our results indicate that asymmetric hysteresis loops are intrinsic to exchange-biased systems and the competition between anisotropies determines the asymmetric behavior of the magnetization reversal.
Low Temperature Physics, 2009
Field dependences of the magnetization and exchange bias in ferro/antiferromagnetic systems. II. Continuum model of a ferromagnetic layer
Physical Review B, 2002
The dependence of exchange bias on antiferromagnet thickness has been measured in FeF 2 /Fe and MnF 2 /Fe bilayers. The two fluoride systems have identical crystal structures, similar lattice constants, but anisotropy fields that differ by a factor of 20. Hence, by comparing the antiferromagnetic layer thickness dependence of the exchange bias in the two systems we are able to directly establish the effect of the antiferromagnet anisotropy. We find that the critical antiferromagnet thickness for the onset of exchange biasing is an order of magnitude smaller for the more anisotropic fluoride, confirming the often-used assumption that the anisotropy dictates the critical thickness. By measuring the temperature dependence of the exchange bias and the structural morphology of the layers we are able to prove that the effects we observe are not due to the blocking-temperature thickness dependence or the onset of discontinuity in thin antiferromagnet layers.
Journal of Applied Physics, 2002
Journal of Applied Physics, 2007
Complementary nature of coercivity enhancement and exchange bias is generalized from the layered systems to ferro-antiferromagnet (F-AF) exchange coupled systems with arbitrary configurations and is proved based on the coherent rotation of the F magnetization. In the proof, the effect of F-AF coupling is absorbed into the anisotropy of the F part, resulting in an arbitrary anisotropy for the F part. The proof starts from a general discussion on the initial susceptibility of a single domain particle. Then the fundamental correlation between the maximal initial susceptibility and the critical field along an arbitrary easy direction of a single domain particle, at which the magnetization becomes unstable, is discussed. Finally, the difference of the initial switching field and the actual switching field along the arbitrarily chosen easy direction is discussed.
Journal of Applied Physics, 2004
2006
Complementary nature of coercivity enhancement and exchange bias is generalized from the layered systems to ferro-antiferromagnet (F-AF) exchange coupled systems with arbitrary configurations and is proved based on the coherent rotation of the F magnetization. In the proof, the effect of F-AF coupling is absorbed into the anisotropy of the F part, resulting in an arbitrary anisotropy for the F part. The proof starts from a general discussion on the initial susceptibility of a single domain particle. Then the fundamental correlation between the maximal initial susceptibility and the critical field along an arbitrary easy direction of a single domain particle, at which the magnetization becomes unstable, is discussed. Finally, the difference of the initial switching field and the actual switching field along the arbitrarily chosen easy direction is discussed.
Applied Physics Express, 2012
Antiferromagnetic-ferromagnetic exchange coupling is known for its pinning effect on the magnetic hard layer through coercivity enhancement or exchange bias. This study reports its effect on controlling perpendicular magnetization in the soft magnetic regime. In a series of Ni 78 Fe 22 (Py)/Mn bilayers, we demonstrate that the magnetization, coercivity, and thermal stability of perpendicular anisotropy can be controlled by varying the thicknesses of the Py and Mn layers, based on the competition between the in-plane anisotropy of the Py layer and the out-of-plane-oriented Py-Mn exchange coupling. This offers a new possibility for the design of magnetic free layers in perpendicular-based magnetic logical devices.
Physical Review B, 2000
Analytical expressions have been derived for the exchange bias field, coercivity, and effective anisotropy field in ferromagnetic/antiferromagnetic bilayers in the framework of a model assuming the formation of a planar domain wall at the antiferromagnetic side of the interface with the reversal of the ferromagnetic orientation. It is shown that there are five different sets of analytical expressions for the hysteresis loop displacement and coercivity, which depend on the interfacial exchange coupling strength and ferromagnetic anisotropy, and only one expression for the effective anisotropy field. These expressions are compared with the previously reported theoretical results, and the validity of the latter is discussed. It is shown that in the framework of the present model, the hysteresis loop, ac susceptibility, and ferromagnetic resonance measurements of exchange anisotropy should give the same values for the exchange bias field. The difference between the exchange bias field values, estimated experimentally by ac susceptibility and through hysteresis loop measurements for Co/CoO bilayers, is explained as well.
Applied Physics Letters, 2003
In (Pt/Co) n /FeMn multilayers, the magnitude of exchange bias, H E , can be considerably enhanced by placing an ultrathin nonmagnetic Pt spacer between the multilayer ͑ML͒ and the antiferromagnetic ͑AFM͒ layer. The bias is maximum for a spacer layer thickness, t, of a few angstroms and it decreases progressively as t is further increased. This bias enhancement is accompanied by an increase of coercivity, H C . This behavior is due to the role of the Pt spacer in enhancing the perpendicular effective anisotropy of the last Co layer in the ML, which has the effect of increasing the net ferromagnetic ͑FM͒/AFM spin projection, thus leading to the H E and H C enhancements. The decrease of H E and H C for thicker spacer layers is due to the limited range of the FM-AFM proximity effect.
Journal of Magnetism and Magnetic Materials, 2007
We propose a method for determination of the distribution function P(j) of the coupling energy density j in polycrystalline textured ferromagnetic (F)/antiferromagnetic (AF) film systems. P(j) governs the entire film coupling J and the exchange bias field H e and was not measurable until now. The method is verified by torquemetry in a high magnetic field and by reversing its rotation sense. The transition to a new magnetic steady state after rotation reversal is analyzed within a Stoner-Wohlfarth model including thermal relaxation. This transition is completed earlier for strongly coupled grains than for grains with smaller j, which is reflected in the torque curves. We determined P(j) for a sputtered NiFe(16 nm)/IrMn(0.8 nm) film at T ¼ 50 K in the hysteretic range of coupling energies and found that P strongly decreases for increasing j.
2011
We have investigated the dependence of magnetic anisotropies of the exchange-biased NiFe/FeMn/CoFe trilayers on the antiferromagnetic ͑AF͒ layer thickness ͑t AF ͒ by measuring in-plane angular-dependent ferromagnetic resonance fields. The resonance fields of NiFe and CoFe sublayers are shifted to lower and higher values compared to those of single unbiased ferromagnetic ͑F͒ layers, respectively, due to the interfacial exchange coupling when t AF Ն 2 nm. In-plane angular dependence of resonance field reveals that uniaxial and unidirectional anisotropies coexist in the film plane, however, they are not collinear with each other. It is found that these peculiar noncollinear anisotropies significantly depend on t AF. The angle of misalignment displays a maximum around t AF = 5 nm and converges to zero when t AF is thicker than 10 nm. Contributions from thickness-dependent AF anisotropy and spin frustrations at both F/AF interfaces due to the structural imperfections should be accounted in order to understand the AF-layer thickness dependence of noncollinear magnetic anisotropies.
Journal of Physics D: Applied Physics, 2006
The influence of an imperfect interface on exchange bias (EB) properties is investigated. Within the framework of the domain state model, the EB field H EB and the coercive field H C are determined using computer simulations, and they are found to depend strongly on the details of the interface structure. This dependence is sensitive to the dilution of the antiferromagnet (AFM) with non-magnetic defects in the bulk. For the optimal interface structure, giving greatest EB, the optimal dilution is found to be much less than that for an ideal-interface system, taking a value in better agreement with experimental results. Even without any defects in the bulk of the AFM the interface roughness leads to EB for thin antiferromagnetic layers, in accordance with the model by Malozemoff. Finally, the thickness dependence of rough-interface systems is found to differ significantly from that of ideal-interface systems.
Applied Physics Letters, 2009
We present a study of exchange bias in ferromagnet/antiferromagnet/ferromagnet ͑FM/AFM/FM͒ trilayers, with in-plane and out-plane easy axes. Using element-specific x-ray magnetic circular dichroism, we demonstrate that simultaneous in-plane and out-of-plane exchange bias can be induced using a single antiferromagnet and zero field cooling, whereas field cooling only induces exchange bias to the layer with easy axis parallel to the cooling field. Our results further evidence the presence of pinned uncompensated moments in both the FM and AFM layers, implying that the AFM layer is capable of supporting uncompensated spins in two orthogonal directions at the same time.
Nanotechnology, 2004
Powders consisting of ferromagnetic (FM) Fe nanoparticles, of about 7 nm in size, embedded in an antiferromagnetic (AFM) Cr 2 O 3 matrix have been obtained by high-temperature reduction under a hydrogen atmosphere of a mixed Cr-Fe oxide. This FM-AFM system exhibits exchange bias effects, i.e. a loop shift (H E ) and coercivity enhancement ( H C ), when field-cooled through the Néel temperature, T N , of Cr 2 O 3 . The exchange bias properties were measured as a function of temperature. H E and H C are found to vanish at about T N (Cr 2 O 3 ), indicating a good quality AFM matrix. Hence, high-temperature reduction of mixed oxides is demonstrated to be a suitable technique to develop new types of FM-AFM exchange-biased nanoparticles, from which novel applications of this phenomenon may be developed.
Physical Review Letters, 2005
The magnetization reversal in exchange-biased ferromagnetic-antiferromagnetic (FM-AFM) bilayers is investigated. Different reversal pathways on each branch of the hysteresis loop, i.e., asymmetry, are obtained both experimentally and theoretically when the magnetic field is applied at certain angles from the anisotropy direction. The range of angles and the magnitude of this asymmetry are determined by the ratio between the FM anisotropy and the interfacial FM-AFM exchange anisotropy. The occurrence of asymmetry is linked with the appearance of irreversibility, i.e., finite coercivity, as well as with the maximum of exchange bias, increasing for larger anisotropy ratios. Our results indicate that asymmetric hysteresis loops are intrinsic to exchange-biased systems and the competition between anisotropies determines the asymmetric behavior of the magnetization reversal.
Physical Review Letters, 2005
Submicron, circular, ferromagnetic-antiferromagnetic dots exhibit different magnetization reversal mechanisms depending on the direction of the magnetic applied field. Shifted, constricted hysteresis loops, typical for vortex formation, are observed for fields along the exchange bias direction. However, for fields applied close to perpendicular to the exchange bias direction, magnetization reversal occurs via coherent rotation. Magnetic force microscopy imaging together with micromagnetic simulations are used to further clarify the different magnetic switching behaviors.
Applied Physics Letters, 2007
Published by the American Institute of Physics.
Applied Physics Letters, 2004
Exchange bias effects have been induced along the perpendicular-to-film direction in nanostructures prepared by electron beam lithography, consisting of a ferromagnetic ͓Pt/Co͔ multilayer exchange coupled to an antiferromagnet ͑FeMn͒. As a general trend, the exchange bias field and the blocking temperature decrease, whereas the coercivity increases, as the size of the nanostructures is reduced.
Applied Physics Letters, 2004
Exchange bias effects have been investigated in ferromagnetic ͑FM͒-antiferromagnetic ͑AFM͒ square dots, with lateral sizes of 90 nm, sputtered on a prepatterned Si substrate. The magnetic behavior of the dots has been compared with that of a continuous FM-AFM bilayer with the same composition. Along the unidirectional direction, the dots exhibit square hysteresis loops and preserve an exchange bias field, H E , of 70 Oe at room temperature, which is about 40% smaller than H E in the continuous film. In addition, the distribution of blocking temperatures in the nanostructures is found to be shifted toward lower values with respect to that in the continuous film. These results can be interpreted assuming that the reduced lateral dimensions of the nanostructures impose some constraints on the formation and pinning of domain walls in the AFM layer.
Physical Review B, 2005
The hysteresis loop shift H E of sub-100-nm ferromagnetic-͑FM-͒ antiferromagnetic ͑AFM͒ nanostructures is found to be strongly influenced by thermal activation effects. These effects, which tend to reduce H E , are more pronounced in the nanostructures than in continuous films with the same composition, particularly for thin AFM layers. In addition, the reduced dimensions of the nanostructures also impose spatial constraints to the AFM domain size, particularly for thick AFM layers. This favors an enhancement of H E . Due to the interplay between these two competing effects, the loop shift in the dots can be either larger or smaller than in the continuous films with the same composition, depending on both the AFM thickness and temperature. A temperature-AFM thickness phase diagram, separating the conditions resulting in larger or smaller H E in the nanostructures with respect to continuous film is derived.
Physical Review Letters, 2005
The hysteresis loop shift in sub-100 nm ferromagnetic-(FM-)antiferromagnetic (AFM) nanostructures can be either enhanced or reduced with respect to continuous films with the same composition, with varying the AFM layer thickness. An enhancement of the coercivity and a reduction of the blocking temperature are also observed. These effects are mainly ascribed to the physical limitations that the dot sizes impose on the AFM domain size and the concomitant weakening of the pinning strength exerted by the AFM during magnetization reversal of the FM.
Physical Review Letters
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized CoFeB allows sensitive detection of the exchange bias. It is found that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.
Journal of Micromechanics and Microengineering, 2011
A thermal nanoimprint process for the high-temperature (400 • C) fabrication of submicron, epitaxial, metallic wire arrays over areas > 1 × 1 cm 2 is reported. Based on a method using an imprinted polymeric bilayer resist template that is transferred to a metallic (molybdenum) mask, this process is enabled by an appropriate undercut profile of the Mo mask. The undercut profile is obtained from a distinctive wedge-shaped profile of the polymeric resist layers by carefully controlling the etch parameters. Using flexible ethylene tetrafluoroethylene imprint molds, we demonstrate defect-free imprinting on MgO substrates. Epitaxial patterning is demonstrated with Fe/MnPd bilayer wire arrays subsequently grown along well-defined crystallographic orientations. X-ray diffraction of the patterned arrays reveals that the MnPd can be grown in two different crystallographic orientations (c-axis and a-axis normals). The epitaxial nature of the patterned arrays is further confirmed by magnetic measurements that demonstrate the competing effects of intrinsic (magnetocrystalline and exchange) and lithography-induced shape anisotropies on the magnetization reversal characteristics along different directions with respect to the axis of the wire arrays.