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2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)
In this paper we present the design and analysis of a distributed regenerative frequency divider (DRFD) based on a novel distributed single-balanced mixer. Artificial transmission lines are incorporated in the distributed single balanced mixer to absorb the parasitic capacitances. The circuit is realized in a 0.18 µ µ µ µm standard CMOS process. It shows a division by two for an input frequency of 40 GHz, while consuming 10 mW from a 1.8-V supply.
IEEE Transactions on Circuits and Systems II: Express Briefs, 2000
This brief presents a robust, power efficient CMOS frequency divider for the 5-GHz UNII band. The divider operates as a voltage controlled ring oscillator with the output frequency modulated by the switching of the input transmission gate. The divider, designed in a 0.25-m SOS-CMOS technology, occupies 35 25 m 2 and exhibit a operating frequency of 5.6 GHz while consuming 79 W at a supply voltage of 0.8 V. Process and temperature tolerant operation can be achieved by utilizing a novel compensation circuitry to calibrate the speed of the ring oscillatorbased divider. The simple compensation circuitry contains lowspeed digital logic and dissipates minimal additional power since it is powered on only during the one-time factory calibration sequence.
2005
Abstract A comprehensive analytical study of high-frequency regenerative frequency dividers (RFD) is presented. The study includes two fundamental modes of operation in RFD, namely stable and pulled operation modes. Differential equations characterizing the RFD behavior for both operation modes are derived. Next, an RFD circuit is designed and simulated in a 0.18 μm standard CMOS process. Simulations verify the accuracy of the proposed analytical models.
This paper presents a regenerative frequency divider topology that provides two synchronous outputs of 1/N and (N −1)/N times the input frequency. This topology may lead to a saving in chip area and power consumption compared to cascaded divider chains trying to achieve the same division ratio. Design trade-offs are discussed following a theoretical treatment. A proof-of-concept divider with two synchronous outputs at 1/4 and 3/4 of the input frequency is designed in a 0.13 µm CMOS technology. The implemented divider achieves a locking range of 5% around 4 GHz for an input power of 8 dBm and a DC power consumption of 5 mW from a 1 V supply.
2006 IEEE North-East Workshop on Circuits and Systems, 2006
This paper presents the design of a high-speed wide-band frequency divider. The divider core is formed with a low voltage swing current mode logic (CML) structure, which enables high frequency operation at very low power dissipation. The divider exhibits very wide locking range from 4GHz-41GHz, and it has an input sensitivity of-31dBm at 30GHz. The divider core draws only 750µA from a 1.2V supply. Post layout simulation results in 90-nm CMOS technology are provided.
2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007
A 2:1 static frequency divider using a bandpass load was fabricated in a digital 90nm SOI CMOS technology. The divider exhibits a maximum operating frequency of 81GHz at 1.2V, and a core power of 15.6mW. The divider can operate down to 0.5V at a maximum operating frequency of 75.6GHz with a core power of 2.75mW.
IEEE Transactions on Circuits and Systems I: Regular Papers, 2005
A spurs reduction fractional-frequency divider with a frequency range which is 3.5 times larger than that of a conventional fractional-divider is presented in this paper. A 1.2-GHz quadrature voltage-controlled oscillator (VCO) is designed as the input source of the frequency divider. The circuit was fabricated using the 0.25-m CMOS technology. The power consumption of the frequency divider and the quadrature VCO are 3 and 6 mW, respectively, at a 2-V supply.
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2005
The design of a high-speed wide-band high resolution programmable frequency divider is investigated. A new reloadable D flip-flop for the high speed programmable frequency divider is proposed. It is optimized in terms of propagation delay and power consumption as compared with the existing designs. Measurement results show that an all-stage programmable counter implemented with this D flip-flop using the Chartered 0.18 m CMOS process is capable of operating up to 1.8 GHz for a 1.8 V supply voltage and a 5.8-mW power consumption. By using this counter, an ultra-wide range high resolution frequency divider is achieved with low power consumption for 5-6-GHz wireless LAN applications.
IEEE Journal of Solid-State Circuits, 2006
A subharmonic down-conversion passive mixer is designed and fabricated in a 90-nm CMOS technology. It utilizes a single active device and operates in the LO source-pumped mode, i.e., the LO signal is applied to the source and the RF signal to the gate. When driven by an LO signal whose frequency is only half of the fundamental mixer, the mixer exhibits a conversion loss as low as 8-11 dB over a wide RF frequency range of 9-31 GHz. This performance is superior to the mixer operating in the gate-pumped mode where the mixer shows a conversion loss of 12-15 dB over an RF frequency range of 6.5-20 GHz. Moreover, this mixer can also operate with an LO signal whose frequency is only 1/3 of the fundamental one, and achieves a conversion loss of 12-15 dB within an RF frequency range of 12-33 GHz. The IF signal is always extracted from the drain via a low-pass filter which supports an IF frequency range from DC to 2 GHz. These results, for the first time, demonstrate the feasibility of implementation of high-frequency wideband subharmonic passive mixers in a low-cost CMOS technology.
arXiv (Cornell University), 2012
The present work consists of designing a Single Balanced Mixer (SBM) with the 65 nm CMOS technology, this for a 1.9 GHz RF channel, dedicated to wireless applications. This paper shows; the polarization chosen for this structure, models of evaluating parameters of the mixer, then simulation of the circuit in 65nm CMOS technology and comparison with previously treated.
2012
This paper presents implementation of a high speed, low noise and low power frequency divider based on current mode logic and cascade connection of divide-by-2/3 cells for high division range. The proposed divider is optimized for high frequency and low power operation. Integration of the proposed divider in a frequency synthesizer is an attractive option for the ultra-low power carrier signal generation in coherent wired and wireless communication systems. A prototype has been implemented in 0.24μm SiGeBiCMOS technology. The operating frequency is 3 GHz; the divide ratio is 64/127 with step of 1 with 2.5V power supply and current consumption is 1.5mA occupying 0.06mm 2 chip areas. The modulus may be integer or fractional.
Microwave and Optical Technology Letters, 2009
IEEE Microwave and Wireless Components Letters, 2000
This paper presents a 0.13 µm CMOS frequency divider realized with an injection-locking ring oscillator. This topology can achieve a larger input frequency range and better phase accuracy with respect to injection-locking LC oscillators, because of the smoother slope of its phase-frequency plot. Post layout simulations show that the circuit is able to divide an input signal spanning from 7 to 19 GHz, although the available tuning range of the signal source limited the experimental verification to the interval 11-15 GHz, 31% locking range. The divider dissipates 3 mA from 1.2 V power supply.
IJIRST, 2014
A low power 1MHz Full programmable frequency divider in 45-nm CMOS process is presented in this paper. The divide ratio can be varied from 2400 to 2431 in a step size of 1.The divider consists of a divide-by-2 circuit, divide-by-2/3 prescaler, divide-by-32/33 prescaler, a programmable pulse-swallow counter. The post simulation results demonstrate that the divider can operate with the input frequency ranging from 2.46GHz-2.541GHz. Measured results show that programmable divider consuming only 613.39 µW at 1V power supply. The programmable frequency divider is design and simulated on Tanner EDA Tool using 45nm CMOS process technology with supply voltage 1 V.
International Journal of Computer Science Issues, 2012
The present work consists of designing a Single Balanced Mixer (SBM) with the 65 nm CMOS technology, this for a 1.9 GHz RF channel, dedicated to wireless applications. This paper shows; the polarization chosen for this structure, models of evaluating parameters of the mixer, then simulation of the circuit in 65nm CMOS technology and comparison with previously treated.
IEEE Journal of Solid-State Circuits, 1995
This paper describes an analog frequency divider HEMT HEMT hplifier Low pass filter Mixer by two working in the millimeter wave frequency range around 60 GHz. This circuit is analyzed with a new method that allows to determine the steady-state regime of any synchronized circuits with standard CAD commercial software. The method proposed relies upon the concept of open loop systems and is applicable to any feedback transistors circuits. The designed circuit was processed using a standard 0.25-pm HEMT technology. Four (2 2) N [ z) transistors were used for realizing the frequency division function as well as the input and output amplification. More than 10% Fo/2 Feedback filter frequency bandwidth and gain Fig. 1. Closed loop diagram of a regenerative FET frequency divider. was obtained using input and output buffers. Measured results were found in good agreement with simulated ones.
2003
A 2:1 static frequency divider was fabricated in a 0.12-μm SOI CMOS technology. The divider exhibits a maximum operating frequency of 33 GHz. When the power consumption is scaled down to 2.7 mW, a maximum operating frequency of 25 GHz is measured.
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2005
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IEEE Microwave and Wireless Components Letters, 2005
This paper presents a 0.13 µm CMOS frequency divider realized with an injection-locking ring oscillator. This topology can achieve a larger input frequency range and better phase accuracy with respect to injection-locking LC oscillators, because of the smoother slope of its phase-frequency plot. Post layout simulations show that the circuit is able to divide an input signal spanning from 7 to 19 GHz, although the available tuning range of the signal source limited the experimental verification to the interval 11-15 GHz, 31% locking range. The divider dissipates 3 mA from 1.2 V power supply.
IET Circuits, Devices & Systems, 2007
A programmable frequency divider with close-to-50% output duty-cycle, with a wide division ratio range, is presented. The proposed divider has also provisions for binary division ratio controls, and has demonstrated operation at frequencies as high as 3.5 GHz. With the above features, the proposed divider can be used in phase-locked loops, and is capable of driving various clocked circuits, which need different clock frequencies. The proposed divider has division ratios from 8 to 510, but it can easily be extended to higher ranges by simply adding more divider stages. The divider circuit has been realised in a 0.18-mm RF CMOS process. Test results show that the output duty-cycle is 50% when the division ratio is an even number. For odd division ratios the worst-case duty-cycle is 44.4% when the division ratio is 9. The output duty-cycle becomes closer to 50% when the division ratio is an increasing odd number. For each division ratio, the output duty-cycle remains constant for different chips, with different input frequencies from gigahertz down to kilohertz ranges, and with different power supply voltages.
Microwave and Optical Technology Letters, 2008
This study proposes a new low-voltage divide-by-3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18-m CMOS process and describes the operation principle of the ILFD. The ILFD circuit is realized with a CMOS dynamic threshold voltage LCtank voltage-controlled-oscillator (VCO) with two injection MOSFETs. The self-oscillating VCO is injection-locked by third-harmonic input to obtain the division order of three. Measurement results show that at the supply voltage of 0.36 V, the free-running frequency is from 1.015 to 1.093 GHz. At the incident power of Ϫ10 dBm, the locking range is from the incident frequency 3.01 to 3.33 GHz. This is the lowest voltage ILFD ever reported in literatures.
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