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A Systematic Study and Characterization of Advanced Corrosion Resistance Materials and Their Applications for Plasma Etching Processes in Semiconductor Silicon Wafer Fabrication Hong Shih Etch Products Group, Lam Research Corporation, Fremont, California, USA
2000
As multistep, multilayer processing in semiconductor industry becomes more complex, the role of cleaning solutions and etching chemistries are becoming important in enhancing yield and in reducing defects. This thesis demonstrates successful formulations that exhibit copper and tungsten compatibility, and are capable of Inter Layer Dielectric (ILD) cleaning and selective Ti etching.
Corrosion Science, 1999
Amorphous hydrogenated silicon\ silicon nitride\ siliconÐcarbon and boron!doped siliconÐ carbon _lms on molybdenum and aluminum substrates were evaluated as corrosion barriers[ Specimens were anodically polarized in NaCl and Na 1 SO 3 solutions and also treated with NaCl and Na 1 SO 3 during exposure in an environmental chamber at 74) RH at 29>C[ The silicon nitride and siliconÐcarbon _lms were inert and rendered substantial protection while the silicon _lms showed signs of extensive deterioration[ Initiation sites for localized corrosion in the silicon nitride and siliconÐcarbon _lms were found not only at _lm pinholes caused by spallation\ but also at microcracks and in regions where visible defects could not be detected using scanning electron microscopy[ Þ 0888 Elsevier Science Ltd[ All rights reserved[
The surface of a component is very critical to maintain the proper functions when it is directly exposed to a very harsh environment. Various commercial treatments are available to enhance the surface properties including heat treatment and painting. For over a half of a century, plasmas have been studied for enhancing the surface properties of materials, and in some areas plasma surface engineering is applied to industrial components. In this paper, we will discuss the latest research in this area and various technologies with the emphasis on materials corrosion protection. SwRI has established 12 vacuum systems with the largest size of 8ft long by 4 ft in diameter. The techniques we have developed include plasma immersion ion implantation (PIII), high intensity plasma ion nitriding (HIPIN), ion beam assisted deposition (IBAD), plasma immersion ion deposition (PIID), and plasma enhanced magnetron sputtering (PEMS) deposition. Using these techniques, we have studied various materials including metals and alloys, ceramics and polymers. In this paper, we will present the latest research 2 results in the development of amorphous/nanocrystalline Al-Ce-Co coatings for Al alloys and steels, diamond-like carbon (DLC) deposition on various materials including 1018 steel for erosion and corrosion resistance, and nanocomposite Ti-Si-C-N coatings for applications in extremely erosive and corrosive environments. An overview of the deposition process and several examples of its successful application in manufacturing corrosion resistant coatings are presented. When compared to uncoated surfaces, significant improvement in corrosion resistance was observed.
Materials Research, 2014
AA 2024 aluminum alloy is widely employed in aeronautic and automobilist industries. Its hardness and low density are attractive properties for such industrial areas. However, since it contains copper, it undergoes severe corrosion in aggressive media as saline or low Earth orbit environments. In this work, it was investigated the properties of films deposited by PECVD on AA 2024 aluminum alloy as well as the corrosion resistance of the film/substrate systems under different corrosive atmospheres. Films were prepared in a plasma atmosphere composed of 50% of oxygen and 50% of hexamethyldisiloxane resulting in a total gas pressure of 4.0 Pa. Plasma ignition was promoted by the application of radiofrequency signal (13.56 MHz) to the sample holder while grounding the topmost electrode. The plasma excitation power, P, was changed from 10 to 80 W in the six different set of experiments. Film thickness, measured by profilometer, increases by 5 times as P was elevated from 10 to 80 W. As demonstrated by the infrared spectra of the samples, films are essentially organosilicons with preservation of functional groups of the precursor molecule and with creation of different ones. The oxide proportion and the structure crosslinking degree are affected by the plasma excitation power. According to the results obtained by sessile drop technique, hydrophilic to moderately hydrophobic films are produced with changing P from 10 to 80 W. The corrosion resistance, evaluated by salt spray and electrochemical impedance spectroscopy, EIS, experiments, in general increases after film deposition. It is demonstrated that film deposition improves, in up to 36 times, the resistance of the alloy to salt spray attack. It is also shown an improvement of about 240 times in the alloy resistance under NaCl solution by the EIS data. Micrographs acquired by Scanning Electron Microscopy after the corrosion tests furnish further information on the importance of the layer physical stability on its barrier properties. Furthermore, films highly protect the alloy against the oxygen attack. Interpretations are proposed based on the modification of the plasma kinetics with P, altering film structure, composition and properties.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004
Low temperature remote plasma cleaning of the fluorocarbon and polymerized residues formed during contact hole dry etching Effect of plasma polymerization film on reducing damage of reactive ion etched silicon substrates with CHF3+O2 plasmas J.
International Conference on Micro- and Nano-Electronics 2014, 2014
Nowadays, some of the important problems in microelectronics technological node scaling down are related to interconnect delay, dynamic power consumption and crosstalk. This compels introduction and integration of new materials with low dielectric permittivity (low-k materials) as insulator in interconnects. One of such materials under consideration for sub 10 nm technology node is a spin-coated organosilicate glass layer with ordered porosity (37-40%) and a k-value of 2.2 (OSG 2.2). High porosity leads to significant challenges during the integration and one of them is a material degradation during the plasma etching. The low-k samples have been etched in a CCP double frequency plasma chamber from TEL. Standard recipes developed for microporous materials with k>2.5 and based on mixture of C 4 F 8 and CF 4 with N 2 , O 2 and Ar were found significantly damaging for high-porous ULK materials. The standard etch recipe was compared with oxygen free etch chemistries based on mixture CF 4 with CH 2 F 2 and Ar assuming that the presence of oxygen in the first recipe will have significant negative impact in high porous ULK materials. The film damage has been analyzed using FTIR spectroscopy and the k-value has been extracted by capacitance CV-measurements. There was indirectly shown that vacuum ultraviolet photons cause the main damage of low-k, whereas radicals and ions are not so harmful. Trench structures have been etched in low-k film and cross-SEM analysis with and without HF dipping has been performed to reveal patterning capability and visualize the sidewall damage and. The bottom roughness was analyzed by AFM. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 02/28/2015 Terms of Use: http://spiedl.org/terms Proc. of SPIE Vol. 9440 944002-2 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 02/28/2015 Terms of Use: http://spiedl.org/terms
Journal of Microelectromechanical Systems, 2002
The ability to predict and control the influence of process parameters during silicon etching is vital for the success of most MEMS devices. In the case of deep reactive ion etching (DRIE) of silicon substrates, experimental results indicate that etch performance as well as surface morphology and post-etch mechanical behavior have a strong dependence on processing parameters. In order to understand the influence of these parameters, a set of experiments was designed and performed to fully characterize the sensitivity of surface morphology and mechanical behavior of silicon samples produced with different DRIE operating conditions. The designed experiment involved a matrix of 55 silicon wafers with radiused hub flexure (RHF) specimens which were etched 10 min under varying DRIE processing conditions. Data collected by interferometry, atomic force microscopy (AFM), profilometry, and scanning electron microscopy (SEM), was used to determine the response of etching performance to operating conditions. The data collected for fracture strength was analyzed and modeled by finite element computation. The data was then fitted to response surfaces to model the dependence of response variables on dry processing conditions. The results showed that the achievable anisotropy, etching uniformity, fillet radii, and surface roughness had a strong dependence on chamber pressure, applied coil and electrode power, and reactant gases flow rate. The observed post-etching mechanical behavior for specimens with high surface roughness always indicated low fracture strength. For specimens with better surface quality, there was a wider distribution in sample strength. This suggests that there are more controlling factors influencing the mechanical behavior of specimens. Nevertheless, it showed that in order to achieve high strength, fine surface quality is a necessary requisite. The mapping of the dependence of response variables on dry processing conditions produced by this systematic approach provides additional insight into the plasma phenomena involved and supplies a practical set of tools to locate and optimize robust operating conditions.
Microelectronic Engineering, 2009
High-k dielectric Decoupled plasma source Dry etch High temperature etch a b s t r a c t TANOS-NAND flash process integration generates various technological difficulties; one of the most relevant is the patterning of TaN metal gates together with Al 2 O 3 high-k dielectrics. BCl 3 /N 2 based high-temperature plasma etching preferably used for structuring high-k materials reveals severe etch damage effects at the TaN sidewalls. Plasma treatments with different etch gases (BCl 3 /N 2 ; O 2 /Ar; Cl 2 /Ar) were used for detailed analyses of chemical effects on the TaN layer. The damage induced by BCl 3 /N 2 based plasma was investigated and characterized using blanket wafers. Approaches to overcome this obstacle are proposed.
2000
Nowadays, plasma-etching processes are asked to produce patterns from the nanometer to the micrometer range with the same efficiency. The very severe requirements in terms of etch rate, selectivity, profile control and surface damage plasma-etching processes lead to, have been at the origin of the development of mechanistic studies by means of plasma diagnostics and surface analysis, as well as the development of new etching devices. We review here the basic concepts of plasma etching, and using examples, we describe more in details important features. We recall, in particular, the important role of the surface layer, the ion bombardment and the substrate temperature. q
J Micromechanic Microengineer, 2009
An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The downside of needing liquid nitrogen to perform cryogenic etching can be improved by using a new approach in which both the pulsed and mixed modes are combined into the so-called puffed mode. Alternatively, the use of tetra-ethyl-ortho-silicate (TEOS) as a silicon oxide precursor is proposed to enable sufficient inhibiting strength and improved profile control up to room temperature. Pulsed-mode processing, the second important aspect, is commonly performed in a cycle using two separate steps: etch and deposition. Sometimes, a three-step cycle is adopted using a separate step to clean the bottom of etching features. This study highlights an issue, known by the authors but not discussed before in the literature: the need for proper synchronization between gas and bias pulses to explore the benefit of three steps. The transport of gas from the mass flow controller towards the wafer takes time, whereas the application of bias to the wafer is relatively instantaneous. This delay causes a problem with respect to synchronization when decreasing the step time towards a value close to the gas residence time. It is proposed to upgrade the software with a delay time module for the bias pulses to be in pace with the gas pulses. If properly designed, the delay module makes it possible to switch on the bias exactly during the arrival of the gas for the bottom removal step and so it will minimize the ionic impact because now etch and deposition steps can be performed virtually without bias. This will increase the mask etch selectivity and lower the heat impact significantly. Moreover, the extra bottom removal step can be performed at (also synchronized!) low pressure and therefore opens a window for improved aspect ratios. The temperature control of the wafer, a third aspect of this study, at a higher etch rate and longer etch time, needs critical attention, because it drastically limits the DRIE performance. It is stressed that the exothermic reaction (high silicon loading) and ionic impact (due to metallic masks and/or exposed silicon) are the main sources of heat that might raise the wafer temperature uncontrollably, and they show the weakness of the helium backside technique using mechanical clamping. Electrostatic clamping, an alternative technique, should minimize this problem because it is less susceptible to heat transfer when its thermal resistance and the gap of the helium backside cavity are minimized; however, it is not a subject of the current study. Because oxygen-growth-based etch processes (due to their ultra thin inhibiting layer) rely more heavily on a constant wafer temperature than fluorocarbon-based processes, oxygen etches are more affected by temperature fluctuations and drifts during the etching. The fourth outcome of this review is a phenomenological model, which explains and predicts many features with respect to loading, flow and pressure behaviour in DRIE equipment including a diffusion zone. The model is a reshape of the flow model constructed by Mogab, who studied the loading effect in plasma etching. Despite the downside of needing a cryostat, it is shown that—when selecting proper conditions—a cryogenic two-step pulsed mode can be used as a successful technique to achieve high speed and selective plasma etching with an etch rate around 25 µm min-1 (<1% silicon load) with nearly vertical walls and resist etch selectivity beyond 1000. With the model in hand, it can be predicted that the etch rate can be doubled (50 µm min-1 at an efficiency of 33% for the fluorine generation from the SF6 feed gas) by minimizing the time the free radicals need to pass the diffusion zone. It is anticipated that this residence time can be reduced sufficiently by a proper inductive coupled plasma (ICP) source design (e.g. plasma shower head and concentrator). In order to preserve the correct profile at such high etch rates, the pressure during the bottom removal step should be minimized and, therefore, the synchronized three-step pulsed mode is believed to be essential to reach such high etch rates with sufficient profile control. In order to improve the etch rate even further, the ICP power should be enhanced; the upgrading of the turbopump seems not yet to be relevant because the throttle valve in the current study had to be used to restrict the turbo efficiency. In order to have a versatile list of state-of-the-art references, it has been decided to arrange it in subjects. The categories concerning plasma physics and applications are, for example, books, reviews, general topics, fluorine-based plasmas, plasma mixtures with oxygen at room temperature, wafer heat transfer and high aspect ratio trench (HART) etching. For readers 'new' to this field, it is advisable to study at least one (but rather more than one) of the reviews concerning plasma as found in the first 30 references. In many cases, a paper can be classified into more than one category. In such cases, the paper is directed to the subject most suited for the discussion of the current review. For example, many papers on heat transfer also treat cryogenic conditions and all the references dealing with highly anisotropic behaviour have been directed to the category HARTs. Additional pointers could get around this problem but have the disadvantage of creating a kind of written spaghetti. I hope that the adapted organization structure will help to have a quick look at and understanding of current developments in high aspect ratio plasma etching. Enjoy reading... Henri Jansen 18 June 2008
Proquest Dissertations and Theses Thesis University of California Berkeley 2009 Publication Number Aai3402688 Isbn 9781109750416 Source Dissertation Abstracts International Volume 71 05 Section B Page 3113 209 P, 2009
Vacuum Beam Studies of Ruthenium Etching Ru is known to have two volatile oxidation products, RuO 3 and RuO 4 , although the etch rate is negligible when Ru is exposed to an O 2 plasma discharge. The introduction of a small amount of additive gas, such as Cl 2 , has been shown to increase the Ru etch rate sixfold. The reason for this dramatic shift in etching is poorly understood, primarily because it is difficult if not impossible to study plasma-surface interactions in a plasma environment. The unique capabilities of the beam system have made it possible to explore the mechanism of Ru etching. It has been shown that under 500 eV Ar + ion bombardment, the addition of O radicals lowered the etch rate by a factor of 2.5. This process was relatively insensitive to temperature over the range studied (room temperature to ~175°C). It was also shown that O radicals alone spontaneously etched Ru at a very slow rate over the entire temperature range. Statistical Analysis of Polysilicon Etching and Gate Profile Evolution in Dual-Doped Polysilicon Gates Polysilicon gate etching for the 90nm lithography node and below requires extremely precise control of the gate CD and profile. Generally speaking, the current requirement for Gate CD control is that the 3 sigma should less than ~5nm for all gates, including across the chip, across the wafer, waferto-wafer, lot-to-lot, and tool-to-tool variations. Similarly, for gate sidewall angle control, the 3 sigma angle variation should be less than ~1 degree, inclusive of all sources of variation. This is particularly challenging for technologies which employ dual-doped gates, since the chemistry and physics of the etching process induces a different profile evolution between gates with different doping. The goal of this project was to identify a parameter space where the differences in gate profile evolution across different polysilicon dopant types were minimized. Blanket etch rates and patterned wafers were used to determine the effect of different gate etch process variables on the gate profile. The materials studied were undoped polysilicon and polysilicon that had been doped with P, As, Sb, and B. Prediction models were created for the blanket etch rate studies that were used to optimize the processing conditions and to propose some simple mechanisms that identify which species are adsorbed on the surface.
Journal of Micromechanics and Microengineering, 1996
This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system configurations are described such as reactive ion etching (RIE). An important feature of RIE is its ability to achieve etch directionality. The mechanism behind this directionality and various plasma chemistries to fulfil this task will be explained. Multi-step plasma chemistries are found to be useful to etch, release and passivate micromechanical structures in one run successfully. Plasma etching is extremely sensitive to many variables, making etch results inconsistent and irreproducible. Therefore, important plasma parameters, mask materials and their influences will be treated. Moreover, RIE has its own specific problems, and solutions will be formulated. The result of an RIE process depends in a non-linear way on a great number of parameters. Therefore, a careful data acquisition is necessary. Also, plasma monitoring is needed for the determination of the etch end point for a given process. This review is ended with some promising current trends in plasma etching.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004
A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen-argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/ min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/ min) than mixtures of oxygen and sulfur hexafluoride (ϳ200 nm/ min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride ͑SiO x F y ͒ compounds. At low incident ion energies, the Ar-SF 6 mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at ϳ75 eV. Etch rates were independent of the 0.5%-50% duty factors studied in this work.
We present our first results on a study of photo-etching as a possible alternative for the texturization of multicrystalline silicon. A HF solution, containing Br 2 as an oxidizing agent whose chemical corrosion is readily inhibited by photogenerated electrons, was used. Simple patterns have been etched on p-type silicon, with etch-rate ratios, between dark and illuminated regions, reaching over 10:1. One serious limitation is poor lateral resolution, due to carrier diffusion, which causes very modest etch ratios in patterns with period of the order of the diffusion length.
Advances in Materials Science and Engineering, 2017
Pure DLC, Si-DLC, and Si-N-DLC films deposited from C2H2, C2H2 : TMS and C2H2 : TMS : N2 mixtures were used to study the effects of the elemental contents (silicon, silicon-nitrogen) on deposition and corrosion resistance properties. The films were prepared on Si (100) wafers using the plasma-based ion implantation (PBII) technique. The film structure was analyzed using Raman spectroscopy. The composition at the top surface of the films was measured using energy dispersive X-ray spectroscopy (EDS). The hardness and elastic modulus of the films were measured using a nanoindentation hardness tester. The corrosion performance of the films was conducted using potentiodynamic polarization experiments in an aqueous 0.05 M NaCl solution. The results indicate that the hardness and corrosion resistance of the Si-DLC film increase as the silicon content increases. This is due to the increase of the sp3 cluster. The corrosion resistance of a pure DLC film increases when silicon and silicon-nit...
Journal of Micromechanics and Microengineering, 2009
An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O 2) or a fluorocarbon (FC) gas (C 4 F 8 or CHF 3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF 3 and C 4 F 8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF 3 is roughly 30 times the flow of C 4 F 8 , and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O 2 is FC-free but shows only tolerable anisotropic results at −120 • C. The downside of needing liquid nitrogen to perform cryogenic etching can be improved by using a new approach in which both the pulsed and mixed modes are combined into the so-called puffed mode. Alternatively, the use of tetra-ethyl-ortho-silicate (TEOS) as a silicon oxide precursor is
Semiconductor Technologies, 2010
Plasmas are found in a wide range of industrial applications, including ashing, sputtering, etching, and chemical vapor deposition. However, the types of plasmas used in each process vary greatly. In this section, we will describe the important parameters of plasmas for understanding ICP-RIE etching and deposition, and establish how they relate to our desired processing results.
Applied Surface Science, 1996
Single crystal silicon was etched with mixtures of SF,. CBrF,, Ar and O,, using different electrode materials to obtain deep trenches. The etch rates. both vertically and horizontally increase when the relative flow of SF, increases. When using aluminium or stainless steel electrodes, the amount of SF, has to be limited to 10% of the total flow of fluorine containing gases to obtain wall profiles with an angle of over 80". However, in all these cases considerable surface roughness is observed. A solution to this problem is the use of a graphite electrode, which permits the use of SF, as the sole halogen containing gas to obtain vertical walls. Depending on the Ar addition, processes with good anisotropy and without surface roughness can be obtained.
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