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CMOS Ultralow Power Brain Signal Acquisition Front-Ends: Design and Human Testing

2017, IEEE Transactions on Biomedical Circuits and Systems

Abstract

Two brain signal acquisition (BSA) front-ends incorporating two CMOS ultra-low power low noise amplifier arrays and serializers operating in MOSFET weak inversion region are presented. To boost the amplifier's gain for a given current budget, cross-coupled-pair active load topology is used in the first stages of these two amplifiers. These two BSA frontends are fabricated in 130 nm and 180nm CMOS processes, occupying 5.45 mm 2 and 0.352 mm 2 of die areas, respectively (excluding pad rings). The CMOS 130 nm amplifier array is comprised of 64 elements, where each amplifier element consumes 0.216 μW from 0.4 V supply, has input-referred voltage noise (IRNoise) of 2.19 μV RM S corresponding to a power efficiency factor (PEF) of 11.7 and occupies 0.044 mm 2 of die area. The CMOS 180 nm amplifier array employs 4 elements, where each element consumes 0.69 μW from 0.6 V supply with IRNoise of 2.3 μVRMS (corresponding to a PEF of 19.3) and 0.051 mm 2 of die area. Non-invasive electroencephalographic (EEG) and invasive electrocorticographic (ECoG) signals were recorded real-time directly on able-bodied human subjects, showing feasibility of using these analog front-ends (AFEs) for future fully implantable brain signal acquisition and brain computer interface systems. Index Terms -CMOS, Electrocorticography (ECoG), Electroencephalogram (EEG), ultra-low power (ULP), noise efficiency factor (NEF), power efficiency factor (PEF), operational transconductance amplifier (OTA), instrumentation amplifier (InAmp), analog front-end (AFE), weak inversion (WI) region.