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This paper is concerned with the analysis and optimization of the ground bounce in digital CMOS circuits. First, an analytical method for calculating the ground bounce is presented. The proposed method relies on accurate models of the short-channel MOS device and the chip-package interface parasitics. Next the effect of ground bounce on the buffer propagation delay and the optimum taper factor is discussed and a mathematical relationship for total propagation delay in the presence of the ground bounce is obtained. The effect of the on-chip decoupling capacitor on ground bounce waveform and the circuit performance is analyzed next and a closed form expression for the peak value of the differential mode component of the ground bounce in terms of on-chip decoupling capacitor is provided. Finally a design methodology for controlling the switching times of the output drivers to minimize the ground bounce is presented
● Signal integrity is a crucial problem in VLSI circuits. ● Package pins, bonding wires, and interconnects cannot be treated as short circuits any more. ● Power/ground bounce limits the performance of high-speed VLSI circuits. ● The noise effects become worse as the clock speed and the number of devices and I/O drivers increase. ... ● Current flowing through the output buffers was modeled as a triangular waveform [Katopis, Proc. IEEE '85]. ... ● The square-law current model was used to model the MOS transistor and the local negative feedback effect was accounted for [ ...
2003
Abstract This paper is concerned with the analysis and optimization of the ground bounce in digital CMOS circuits. First, an analytical method for calculating the ground bounce is presented. The proposed method relies on accurate models of the short-channel MOS device and the chip-package interface parasitics.
IEEE Journal of Solid-state Circuits, 2004
Ground bounce is a major contributor to substrate noise generation due to the resonance caused by the inductance and the VDD-VSS admittance that consists of the on-chip digital circuit capacitance of the MOS transistors, the decoupling, and the parasitics arising from the interconnect. This paper addresses (1) the dependence of the VDD-VSS admittance on the different states of the circuit and the interconnect and (2) the computation of total supply current with ground bounce. The VDD-VSS admittances of several test circuits are computed with 13% maximum error relative to the measurements on a test ASIC fabricated in a 0.18µm CMOS process on a high-ohmic substrate with 18Ωcm resistivity. It is also shown that this admittance depends on the connectivity of the gates to the supply rail rather than their connectivity among each other.
1988
di dt d remains relatively constant for the voltage d t d' d t The authors would like to thank J. Nahas for his comments and J. Rowland for testing the device. 88 e 1988 IEEE International Solid-state Circuits Conference
IEEE Transactions on Electromagnetic Compatibility, 2018
2001
A digital CMOS buffer circuit with a voltage transfer characteristic (VTC) with low threshold voltage detection, hysteresis, and high noise immunity is presented. The circuit is capable of restoring slow transition times and distorted input signals with a minimum delay penalty, offering at the same time high noise immunity to glitches induced either through capacitive coupling or from the power supply lines. The high noise immunity of the proposed buffer circuit is achieved using differential mode rejection and a differential redundant circuit architecture.
This paper presents an experimental evaluation of crosstalk effects due to current pulses drawn from voltage supplies in mixed analog-digital CMOS integrated circuits. A test chip was designed in 0.18-µm CMOS technology, integrated and mounted in two different ways, namely, in JLCC package and with flip-chip assembly technique, in order to compare measurement results. As expected, the circuit assembled with the flip-chip technique has better immunity to disturbances generated by the digital section, due to the lower values of interconnection parasitics.
IEEE Workshop on Signal Processing Systems, 2000
On-chip parasitic inductance inherent to the power supply rails has become significant in high speed digital circuits. Therefore, current surges result in voltage fluctuations within the power distribution networks, creating delay uncertainty. On-chip simultaneous switching noise should therefore be considered when estimating the propagation delay of a CMOS logic gate in high speed synchronous CMOS integrated circuits. Analytical expressions characterizing the on-chip simultaneous switching noise voltage and the output voltage waveform of a CMOS logic gate driving both a capacitive and a resistive-capacitive load are presented in this paper. The waveform of the output voltage signal based on the analytical expressions is quite close to SPICE. The estimated propagation delay is within % as compared to SPICE while the average improvement in accuracy can reach ¡ £ ¢ % as compared to a delay estimated without considering on-chip simultaneous switching noise. The analytical expressions presented here provide an accurate timing model for non-negligible on-chip simultaneous switching noise in high speed synchronous CMOS integrated circuits.
IEEE Transactions on Electromagnetic Compatibility, 2015
Soft errors can occur in digital integrated circuits (ICs) as a result of an electromagnetic disturbance, such as might result from an electrical fast transient (EFT). Many soft errors come from changes in propagation delays through digital logic, which are caused by changes in the on-die power supply voltage. An analytical model was developed to predict timing variations in digital logic as a result of variations in the power supply voltage. The derivation of the analytical delay model is reported. The model was validated experimentally by applying EFTs to a ring oscillator built in a test IC. The predicted and measured ring oscillator frequencies (or periods) agreed within a relative error of less than 2.0%. To further validate the approach, the model was applied to test the response of more complex circuits consisting of NAND/NOR logic gates, binary adders, dynamic logic gates, and transmission gates. The circuits were fabricated on a 0.5 μm test IC and simulated on two additional process technologies (0.18 μm and 45 nm). The model performed well in each case with a maximum relative error of 5.6%, verifying the applicability of the model for analyzing complex logic circuits within a variety of process technologies. The proposed delay model can be used by IC design engineers to predict and understand the change in the propagation delay through logic circuits due to the disturbed power supply.
IEEE Transactions on Instrumentation and Measurement, 2000
This paper presents an approach for the analysis and the experimental evaluation of crosstalk effects due to the current pulses drawn from voltage supplies in mixed analog-digital CMOS ICs. To this end, two test chips were designed in 0.18-μm CMOS technology. The two test chips were integrated and then mounted on a board with and without package to compare measurements on chips mounted in package and mounted on board. To ensure that the differences between measurements are only due to the assembling technique, the same printed circuit boards were used for both chip-in-package and chip-on-board. Moreover, the experimental setup was carefully arranged so as not to introduce further disturbances due to external connections or noise sources. Both ICs were extensively simulated by using a realistic model of on-chip and off-chip parasitics to study what happens in the analog section when digital switching noise is injected. Simulations results, confirmed by test chip measurements, demonstrate that disturbances due to switching currents in digital blocks propagate through substrate, package, and interconnection parasitics and affect analog voltages, thus degrading the circuit performance. Therefore, reduction of parasitics is essential in mixed-signal highfrequency circuits, such as radio-frequency front-ends.
International Journal of Information and Electronics Engineering, 2013
As technology is continuously scaling down leakage current is increasing exponentially. Multi-Threshold CMOS technique is a well known way to reduce leakage current but it gives rise to a new problem i.e. ground bounce noise which reduces the reliability of the circuit and because of this circuit may incorrectly switch to the wrong value or may switch at the wrong time. Ground bouncing noise produced during sleep to active mode transitions is an important challenge in Multi-Threshold CMOS (MTCMOS) circuits. The effectiveness of noise-aware forward body biased multimode MTCMOS circuit techniques to deal with the ground bouncing noise is evaluated in this paper. An additional wait mode is investigated to gradually dump the charge stored on the virtual ground line to the real ground distribution network during the sleep to active mode transitions. The peak amplitude of the ground bouncing noise is reduced by 93.28% and standby leakage current is reduced by 23.94% as compared to standard trimode MTCMOS technique. To evaluate the significance of the proposed multimode Multi-Threshold CMOS technique, the simulation has been performed for 16-bit full adder circuit using BPTM 90nm standard CMOS technology at room temperature with supply voltage of 1V .
Sub-threshold leakage current is exponentially increased with the scaling down the technology in CMOS circuits. MTCMOS is the method to reduce the leakage current but it arise a problem Ground bouncing noise which degrades the circuit reliability. Ground bouncing noise is important issue in MTCMOS circuits. It produced when circuit is transition from SLEEP to ACTIVE mode. This paper describes the various noise minimization MTCMOS techniques. The comparison of different techniques according to magnitude of Ground bouncing noise is tabulated. Dependency of Ground bouncing noise and power consumption on the various parameters like sleep transistor size, controlling transistor size, Temperature, supply voltage and threshold voltage is also characterized in this paper.
2011 17th IEEE International Symposium on Asynchronous Circuits and Systems, 2011
With technology scaling into the deep sub-micron regime, the power supply and ground noise, which is introduced by the simultaneous switching activity in digital circuits, becomes a challenge for SoC and Networks-on-Chip (NoC) design. In this paper, analytical expressions of the magnitude of ground bounce for different gate switching ratios are derived. It is shown that, by spreading the switching activity, asynchronous circuits design contributes to the ground bounce suppression in two aspects: (1) a significant decrease in the switching current strength and (2) a slight increase in the on-chip intrinsic decoupling capacitance. In order to minimize the switching ratio in large-scale digital VLSI systems, the globally asynchronous locally synchronous (GALS) design is exploited for coarse-grained scheduling and spreading the gate switching over different local clock domains. Important design guidelines, including the GALS system partitioning and local clock modulation, are discussed. As a practical example, a 64-point pipelined SYNC/GALS FFT processor was implemented using the IHP 130-nm CMOS process. The measurements on the packaged chip demonstrate that, compared with the synchronous mode, around 40% reduction in the magnitude of ground bounce is achieved in the GALS mode.
2015
Scaling of devices in CMOS technology leads to increase in parameter like Ground bounce noise, Leakage current, average power dissipation and short channel effect. FinFET are the promising substitute to replace CMOS. Ground bounce noise is produced when power gating circuit goes from SLEEP to ACTIVE mode transition. FinFET based designs are compared with MOSFET based designs on basis of different parameter like Ground bounce noise, leakage current and average power dissipation. HSPICE is the software tool used for simulation and circuit design.
1996
Several techniques to reduce the ground bounce effect in CMOS chips are described. The effective width of the predrive and final driver of a CMOS output buffer is automatically adjusted to compensate for process, voltage, and temperature (PVT) variations. The slew rate of the predrive nodes is controlled by introducing a digitally weighted capacitance. Finally, a compensated active resistance is inserted into both the power and ground leads to further dampen the oscillations. These techniques allow the buffer to behave uniformly over the entire PVT range. Measurements of a 0.5-m CMOS test chip have demonstrated that these new buffers generate 2.52 less ground bounce when compared to conventional buffers. An external resistance is required to set a reference current.
2008 IEEE Computer Society Annual Symposium on VLSI, 2008
Conventional power gating techniques for minimizing leakage currents introduce ground bounce noise during power mode transition. Here an analysis of ground bounce due to power mode transition in power gating structures is presented. An innovative power gating approach is proposed, which in addition to targeting maximum reduction of major leakage currents will provide a way to control ground bounce during power mode transition. The proposed power gating technique will have an additional intermediate HOLD mode along with conventional CUTOFF and RUN modes. Its stepwise turning on feature will provide higher reduction of the magnitude of peak current and voltage glitches in the power distribution network as well as the minimum time required to stabilize power and ground as compared to other similar techniques.
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 1999
The industry trend towards system-on-chip solutions continues to push the limits of mixed-signal design. Increasing the integration of analog and digital circuitry causes a struggle to maintain analog signal integrity. Digital switching noise coupling through the common substrate is both difficult to measure and difficult to control. This paper introduces and applies a practical first-order simulation methodology for performing a substrate noise analysis in a low resistive bulk process. Although this subject has been analyzed in numerous journal articles, few have applied their analysis method to a whole-chip design. This SPICE model will allow mixed-signal designers to determine design variables that will minimize substrate noise. This work elaborates on key aspects of substrate noise that available references do not handle adequately including: sources of substrate noise, determination of power rail and bulk resonance frequencies, and alternatives for bulk biasing. The new model is used to analyze Motorola's 56824, the latest low cost 16 bit DSP design. The analysis includes the determination of: 1) the on-chip bus and I/O bus noise coupled to the substrate, 2) the dominant resonant frequencies in the chip, and 3) the best bulk biasing alternative.
… on Electronic System …, 2010
In nanometer regime, ground bounce noise and noise immunity are becoming important metric of comparable importance to the leakage current and active power for the analysis and design of complex arithmetic logic circuits. In this paper, low leakage 1bit full adder cell is proposed for mobile applications with low ground bounce noise. A novel approach has been introduced with stacking power gating technique for further reduction in the peak of ground bounce noise during the sleep to active mode transition. The simulation results depicts that the proposed design leads to efficient 1bit full adder cell in terms of standby leakage power, active power, ground bounce noise and propagation delay. We have performed simulations using Cadence Spectre 90nm standard CMOS technology at room temperature with supply voltage of 1V.
The development of digital integrated circuits is challenged by higher power consumption. The combination of higher clock speeds, greater functional integration, and smaller process geometries has contributed to significant growth in power density. Today leakage power has become an increasingly important issue in processor hardware and software design. So to reduce the leakages in the circuit many low power strategies are identified and experiments are carried out. But the leakage due to ground connection to the active part of the circuit is very higher than all other leakages. As it is mainly due to the back EMF of the ground connection we are calling it as ground bounce noise. To reduce this noise, different methodologies are designed. In this paper, a
IEEE Transactions on Electromagnetic Compatibility, 1992
This paper shows how crosstalk coupling between transmission lines inside CMOS integrated circuits can provoke faulty behaviors by affecting the propagation delay of the logic and analog cells. A simplified model for the evaluation of parasitic capacitive coupling effects is proposed and the influence of crosstalk on the behavior of basic functions such as logic gate, latch, RAM memory, and analog-to-digital converter are evaluated.
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